? 1 ? e01433b22-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. CXG1100TN 10 pin tssop (plastic) high power dpdt switch with logic control description the CXG1100TN is a high power dpdt switch mmic. this ic can be used in wireless communi- cation systems, for example, dual-band cdma handsets. the CXG1100TN can be operated by cmos control. the sony?s jfet process is used for low insertion loss and on-chip logic circuit. features ? low insertion loss: 0.35db @900mhz high linearity: iip3 (typ.) = 60dbm 1 cmos compatible control line small package size: 10-pin tssop applications dual band cellular handsets cdma and gps, dual band cdma structure gaas j-fet mmic absolute maximum ratings (ta = 25c) bias voltage v dd 7v control voltage vctl 5 v operating temperature topr ?35 to +85 c storage temperature tstg ?65 to +150 c gaas mmics are esd sensitive devices. special handling precautions are required.
? 2 ? CXG1100TN block diagram and recommended circuit when using this ic, the following external components should be used: rctl: this resistor is used to improve esd performance. 1k ? is recommended. c rf : this capacitor is used for rf de-coupling and must be used for all applications. 100pf is recommended. cbypass: this capacitor is used for dc line filtering. 100pf is recommended. truth table item vctl (h) vctl (l) v dd min. 2.5 0 2.7 ty p. 3.0 ? 3.0 max. 3.6 0.8 4.5 unit v v v dc bias conditions (ta = 25c) on state rf1 ? rf2, rf3 ? rf4 rf2 ? rf3, rf4 ? rf1 ctl l h 1 2 3 4 5 6 7 8 9 10 gnd gnd rf2 c rf (100pf) rf1 c rf (100pf) rf3 gnd gnd c rf (100pf) cbypass (100pf) v dd rf4 c rf (100pf) rctl (1k ? ) cbypass (100pf) ctl off state rf2 ? rf3, rf4 ? rf1 rf1 ? rf2, rf3 ? rf4 f1 on off f2 off on f3 on off f4 off on
? 3 ? CXG1100TN electrical characteristics (ta = 25 c) unit db db ? dbc dbc dbm dbm ? ma ? max. 0.60 1.4 5 0.3 160 ty p . 0.35 22 1.2 ? 75 ? 75 60 35 1 0.1 80 min. 20 ? 60 ? 60 50 32 symbol il iso. vswr 2fo 3fo iip3 p1db tsw i dd ictl item insertion loss isolation vswr harmonics input ip3 1db compression input power switching speed bias current control current ? 1 pin = 24dbm, 0/3v control, v dd = 3.0v, 900mhz ? 2 pin = 24dbm (900mhz) + 24dbm (901mhz), 0/3v control, v dd = 3.0v condition ? 1 ? 1 50 ? ? 1 ? 1 ? 2 v dd = 2.8v v dd = 3.0v vctl (high) = 3v
? 4 ? CXG1100TN sony corporation package outline unit: mm sony code eiaj code jedec code package material lead treatment lead material package mass epoxy resin solder plating copper alloy package structure 0.22 ? 0.07 0.5 5 1.2max ? 2.8 0.1 10 6 ? 2.2 0.1 3.2 0.2 0.1 ? 0.05 + 0.15 0.45 0.15 0? to 10? 1 a (0.2) 0.22 ?0.07 + 0.08 (0.1) 0.12 ?0.015 + 0.025 detail a 0.02g tssop-10p-l01 10pin tssop (plastic) 0.1 0.1 m note: dimension " ? " does not include mold protrusion. 0.25 + 0.08 sony code eiaj code jedec code package material lead treatment lead material package mass epoxy resin solder plating copper alloy package structure 0.22 0.07 0.5 5 1.2max ? 2.8 0.1 10 6 ? 2.2 0.1 3.2 0.2 0.1 0.05 + 0.15 0.45 0.15 0 ? to 10 ? 1 a (0.2) 0.22 0.07 + 0.08 (0.1) 0.12 0.015 + 0.025 detail a 0.02g tssop-10p-l01 10pin tssop (plastic) 0.1 0.1 m note: dimension " ? " does not include mold protrusion. 0.25 + 0.08 lead plating specifications item lead material copper alloy solder composition sn-bi bi:1-4wt% plating thickness 5-18m spec.
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